本论文采用脉冲激光沉积技术在Si(001)与Si(111)基板上制备了Cu_xSi_1-x薄膜，采用X-射线衍射（XRD）、场发射扫描电子显微镜（FESEM）、原子力显微镜（AFM）、极图等测试手段研究了工艺参数对薄膜的物相，面内、外取向，表、截面显微形貌以及外延生长关系的影响规律。此外，基于居里-乌尔夫原理及晶体学理论讨论了薄膜的生长机理。主要内容及创新点如下：

(1)研究沉积温度对薄膜物相的影响：沉积温度(T_d)由20 °C上升至700 °C，薄膜物相由Cu依次转变为η’’-Cu_3Si、η’-Cu_3Si、ε-Cu_15Si_4、δ-Cu_0.83Si_0.17、η-Cu_3Si。

(2)研究了Si基板取向对薄膜物相的影响，在Si(001)基板上，T_d由20 °C上升至700 °C依次出现Cu、η''、η'、ε、δ以及η相；在Si(111)基板上，T_d由20 °C上升至700 °C依次出现Cu、η''、η'以及η相。

(3)研究并控制了薄膜面内、外取向。T_d=20 °C时在Si(001)基板上沉积得到具有Cu(001)完全取向的薄膜；T_d=700 °C时在Si(111)基板上沉积得到具有η(001)完全取向的薄膜。采用极图测试对薄膜面内取向进行研究，阐述了薄膜的外延关系与薄膜-基板界面的原子排布情况。

(4)研究了基板取向对薄膜形貌的影响。T_d=600-700 °C时，分别在Si(001)与Si(111)基板上沉积得到具有四棱锥，三棱柱形貌的Cu_xSi_1-x晶粒。基于居里-乌尔夫原理分析晶粒形貌演化规律。

(5)研究表面重构对薄膜表面形貌的影响。对T_d =600 °C条件下Si(001)基板上Cu_xSi_1-x晶粒的生长过程进行观察，研究晶粒形貌的演化过程，并利用表面重构对晶粒演化过程进行阐述。采用选择性刻蚀法研究了薄膜-基板界面中Cu、Si间的化学反应。利用HNO_3溶液对Cu_xSi_1-x的选择性刻蚀研究了Cu/Si界面原子扩散及反应进程。

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